PNP Bipolar Junction Transistor (BJT) in a TO-92 package. Features a 45V collector-emitter breakdown voltage and a maximum collector current of 800mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 100MHz. Designed for through-hole mounting, this RoHS compliant component operates within a temperature range of -55°C to 150°C. Maximum power dissipation is 625mW.
Onsemi BC32716 technical specifications.
| Package/Case | TO-92 |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -700mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 700mV |
| Current Rating | -800mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 800mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 625mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -45V |
| Weight | 0.2g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BC32716 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
