PNP Bipolar Junction Transistor (BJT) in TO-92 package. Features a collector-emitter breakdown voltage of 45V, maximum collector current of 800mA, and a transition frequency of 100MHz. Offers a minimum DC current gain (hFE) of 100 and a maximum power dissipation of 625mW. Operates across a temperature range of -55°C to 150°C. Through-hole mount with tin, matte contact plating.
Frequency100MHz
PackageTO-92
Current Rating-800mA
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi BC32716BU technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
-10V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
-700mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
700mV
Contact Plating
Tin, Matte
Current Rating
-800mA
Emitter Base Voltage (VEBO)
-5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
4.58mm
hFE Min
100
Lead Free
Lead Free
Length
4.58mm
Max Collector Current
800mA
Max Frequency
20MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Through Hole
Number of Elements
1
Package Quantity
1000
Packaging
Bulk
Polarity
PNP
Power Dissipation
625mW
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
-45V
Weight
0.179g
Width
3.86mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BC32716BU Datasheet
Download the complete datasheet for Onsemi BC32716BU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
