PNP Bipolar Junction Transistor (BJT) with a 45V collector-emitter voltage (VCEO) and a maximum collector current of 800mA. Features a transition frequency of 100MHz, a minimum hFE of 100, and a collector-emitter saturation voltage of -700mV. Packaged in a TO-92 through-hole mount with matte tin plating, this RoHS compliant component operates from -55°C to 150°C with a power dissipation of 625mW.
Frequency100MHz
PackageTO-92
Current Rating-800mA
MountingThrough Hole
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Technical Specifications
Onsemi BC32716TA technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | -10V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -700mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 700mV |
| Contact Plating | Tin, Matte |
| Current Rating | -800mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 4.58mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 4.58mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 800mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -45V |
| Weight | 0.24g |
| Width | 3.86mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BC32716TA Datasheet
Download the complete datasheet for Onsemi BC32716TA to view detailed technical specifications.
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