PNP Bipolar Junction Transistor (BJT) with a 45V collector-emitter voltage (VCEO) and a maximum collector current of 800mA. Features a transition frequency of 100MHz, a minimum hFE of 100, and a collector-emitter saturation voltage of -700mV. Packaged in a TO-92 through-hole mount with matte tin plating, this RoHS compliant component operates from -55°C to 150°C with a power dissipation of 625mW.
Frequency100MHz
PackageTO-92
Current Rating-800mA
MountingThrough Hole
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Technical Specifications
Onsemi BC32716TA technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
-10V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
-700mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
700mV
Contact Plating
Tin, Matte
Current Rating
-800mA
Emitter Base Voltage (VEBO)
-5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
4.58mm
hFE Min
100
Lead Free
Lead Free
Length
4.58mm
Max Breakdown Voltage
45V
Max Collector Current
800mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Through Hole
Number of Elements
1
Package Quantity
1
Packaging
Ammo Pack
Polarity
PNP
Power Dissipation
625mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
-45V
Weight
0.24g
Width
3.86mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BC32716TA Datasheet
Download the complete datasheet for Onsemi BC32716TA to view detailed technical specifications.
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