PNP Bipolar Junction Transistor (BJT) for through-hole mounting in a TO-92 package. Features a 45V collector-emitter breakdown voltage and a maximum collector current of 800mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 100MHz. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 625mW. RoHS compliant with tin-matte contact plating.
Frequency100MHz
PackageTO-92
Current500mA
Current Rating-800mA
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Technical Specifications
Onsemi BC32725TA technical specifications.
General
Package/Case
TO-92
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
-700mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
700mV
Contact Plating
Tin, Matte
Current
500mA
Current Rating
-800mA
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
5.33mm
hFE Min
100
Lead Free
Lead Free
Length
5.2mm
Max Breakdown Voltage
45V
Max Collector Current
800mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Ammo Pack
Polarity
PNP
Power Dissipation
625mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
-50V
Weight
0.008466oz
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BC32725TA Datasheet
Download the complete datasheet for Onsemi BC32725TA to view detailed technical specifications.
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