NPN Bipolar Junction Transistor (BJT) for through-hole mounting in a TO-92 package. Features a maximum collector current of 800mA and a collector-emitter voltage (VCEO) of 45V. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 100MHz. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. This RoHS compliant component is supplied in an ammo pack.
Frequency100MHz
PackageTO-92-3
Current Rating800mA
MountingThrough Hole
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Technical Specifications
Onsemi BC33716TAR technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 700mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 700mV |
| Current Rating | 800mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 800mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 45V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BC33716TAR Datasheet
Download the complete datasheet for Onsemi BC33716TAR to view detailed technical specifications.
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