NPN silicon bipolar junction transistor for small signal applications. Features 80V collector-emitter breakdown voltage and 1A continuous collector current. Offers a minimum DC current gain (hFE) of 8000 and a transition frequency of 200MHz. Packaged in a TO-92-3 through-hole configuration, this lead-free component operates from -55°C to 150°C with a maximum power dissipation of 625mW.
PackageTO-92-3
Current Rating1A
MountingThrough Hole
PolarityNPN
Quick Jump:
Technical Specifications
Onsemi BC373G technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1.1V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 1.1V |
| Continuous Collector Current | 1A |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 12V |
| hFE Min | 8000 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | 80V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BC373G Datasheet
Download the complete datasheet for Onsemi BC373G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
