PNP Darlington Bipolar Junction Transistor (BJT) in a TO-92 package. Features a 30V collector-emitter voltage (VCEO) and a 1A continuous collector current. Offers a minimum DC current gain (hFE) of 30000 and a transition frequency of 200MHz. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 625mW. Through-hole mounting and lead-free construction.
PackageTO-92
Voltage30V
Current Rating-1A
MountingThrough Hole
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Technical Specifications
Onsemi BC516 technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 1V |
| Continuous Collector Current | 1A |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | 10V |
| Height | 5.33mm |
| hFE Min | 30000 |
| Lead Free | Lead Free |
| Length | 5.2mm |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 625mW |
| RoHS Compliant | Yes |
| Series | BC516 |
| Transition Frequency | 200MHz |
| Voltage | 30V |
| DC Rated Voltage | -30V |
| Weight | 0.007055oz |
| Width | 4.19mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BC516 Datasheet
Download the complete datasheet for Onsemi BC516 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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