PNP Darlington Bipolar Junction Transistor (BJT) in a TO-92 package. Features a 30V collector-emitter voltage (VCEO) and a 1A continuous collector current. Offers a minimum DC current gain (hFE) of 30000 and a transition frequency of 200MHz. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 625mW. Through-hole mounting and lead-free construction.
PackageTO-92
Voltage30V
Current Rating-1A
MountingThrough Hole
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Technical Specifications
Onsemi BC516 technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
40V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
1V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
1V
Continuous Collector Current
1A
Current Rating
-1A
Emitter Base Voltage (VEBO)
10V
Height
5.33mm
hFE Min
30000
Lead Free
Lead Free
Length
5.2mm
Max Collector Current
1A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Bulk
Polarity
PNP
Power Dissipation
625mW
RoHS Compliant
Yes
Series
BC516
Transition Frequency
200MHz
Voltage
30V
DC Rated Voltage
-30V
Weight
0.007055oz
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BC516 Datasheet
Download the complete datasheet for Onsemi BC516 to view detailed technical specifications.
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