
NPN bipolar junction transistor in a TO-92 package, designed for through-hole mounting. Features a 30V collector-emitter breakdown voltage and a continuous collector current rating of 1.2A. Offers a high DC current gain (hFE) of 30000 minimum and a transition frequency of 200MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. This RoHS compliant component is supplied in bulk packaging.
Onsemi BC517 technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 1V |
| Continuous Collector Current | 1.2A |
| Current Rating | 1.2A |
| Emitter Base Voltage (VEBO) | 10V |
| hFE Min | 30000 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Transition Frequency | 200MHz |
| DC Rated Voltage | 30V |
| Weight | 0.2g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BC517 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
