NPN Silicon Bipolar Junction Transistor (BJT) in TO-92 package. Features a 65V collector-emitter voltage (VCEO) and 80V collector-base voltage (VCBO). Offers a maximum collector current of 100mA and a transition frequency of 300MHz. Includes a minimum DC current gain (hFE) of 110 and a maximum power dissipation of 500mW. Designed for through-hole mounting and supplied in bulk packaging.
Frequency300MHz
PackageTO-92
Current Rating100mA
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi BC546 technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 65V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 65V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 110 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Frequency | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| Termination | Through Hole |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 65V |
| Weight | 0.2g |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Onsemi BC546 Datasheet
Download the complete datasheet for Onsemi BC546 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
