NPN Silicon Bipolar Junction Transistor (BJT) in TO-92 package. Features a 65V collector-emitter voltage (VCEO) and 80V collector-base voltage (VCBO). Offers a maximum collector current of 100mA and a transition frequency of 300MHz. Includes a minimum DC current gain (hFE) of 110 and a maximum power dissipation of 500mW. Designed for through-hole mounting and supplied in bulk packaging.
Frequency300MHz
PackageTO-92
Current Rating100mA
MountingThrough Hole
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Technical Specifications
Onsemi BC546 technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
65V
Collector Emitter Saturation Voltage
250mV
Collector Emitter Voltage (VCEO)
65V
Collector-emitter Voltage-Max
600mV
Current Rating
100mA
Emitter Base Voltage (VEBO)
6V
Frequency
300MHz
Gain Bandwidth Product
300MHz
hFE Min
110
Lead Free
Lead Free
Max Collector Current
100mA
Max Frequency
300MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
500mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Bulk
Polarity
NPN
Power Dissipation
500mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
No
Termination
Through Hole
Transition Frequency
300MHz
DC Rated Voltage
65V
Weight
0.2g
Compliance
RoHS
Not CompliantNo
Datasheet
Onsemi BC546 Datasheet
Download the complete datasheet for Onsemi BC546 to view detailed technical specifications.
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