NPN bipolar junction transistor (BJT) in a TO-92 package, featuring a 65V collector-emitter breakdown voltage and a 100mA maximum collector current. This through-hole component offers a minimum DC current gain (hFE) of 110 and a transition frequency of 300MHz. It operates within a temperature range of -65°C to 150°C and has a maximum power dissipation of 500mW.
Frequency300MHz
PackageTO-92-3
Current Rating100mA
MountingThrough Hole
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Technical Specifications
Onsemi BC546B technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 65V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 65V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 300MHz |
| Height | 5.33mm |
| hFE Min | 110 |
| Lead Free | Lead Free |
| Length | 5.2mm |
| Max Collector Current | 100mA |
| Max Frequency | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | NPN |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 65V |
| Weight | 0.2g |
| Width | 4.19mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi BC546B Datasheet
Download the complete datasheet for Onsemi BC546B to view detailed technical specifications.
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