NPN bipolar junction transistor (BJT) in a TO-92 package, featuring a 65V collector-emitter breakdown voltage and a 100mA maximum collector current. This through-hole component offers a minimum DC current gain (hFE) of 110 and a transition frequency of 300MHz. It operates within a temperature range of -65°C to 150°C and has a maximum power dissipation of 500mW.
Frequency300MHz
PackageTO-92-3
Current Rating100mA
MountingThrough Hole
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Technical Specifications
Onsemi BC546B technical specifications.
General
Package/Case
TO-92-3
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
65V
Collector Emitter Saturation Voltage
250mV
Collector Emitter Voltage (VCEO)
65V
Collector-emitter Voltage-Max
600mV
Current Rating
100mA
Emitter Base Voltage (VEBO)
6V
Gain Bandwidth Product
300MHz
Height
5.33mm
hFE Min
110
Lead Free
Lead Free
Length
5.2mm
Max Collector Current
100mA
Max Frequency
300MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
500mW
Mount
Through Hole
Package Quantity
2000
Packaging
Bulk
Polarity
NPN
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
300MHz
DC Rated Voltage
65V
Weight
0.2g
Width
4.19mm
Compliance
RoHS
Not Compliant
Datasheet
Onsemi BC546B Datasheet
Download the complete datasheet for Onsemi BC546B to view detailed technical specifications.
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