NPN Bipolar Junction Transistor (BJT) in a TO-92 package. Features a 65V collector-emitter breakdown voltage and 100mA maximum collector current. Offers a minimum DC current gain (hFE) of 110 and a transition frequency of 300MHz. Designed for through-hole mounting, this RoHS compliant component operates from -65°C to 150°C with a 500mW power dissipation.
Frequency300MHz
PackageTO-92-3
Current Rating100mA
MountingThrough Hole
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Technical Specifications
Onsemi BC546BBU technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 65V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 65V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 110 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 500mW |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 65V |
| Weight | 0.1782g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BC546BBU Datasheet
Download the complete datasheet for Onsemi BC546BBU to view detailed technical specifications.
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