NPN Bipolar Junction Transistor (BJT) in a TO-92 package. Features a 65V collector-emitter voltage (VCEO) and 80V collector-base voltage (VCBO). Offers a maximum collector current of 100mA and a minimum DC current gain (hFE) of 200. Operates with a transition frequency of 300MHz and a maximum power dissipation of 625mW. Packaged on a 2000-piece tape and reel.
Frequency300MHz
PackageTO-92-3
Current Rating100mA
PolarityNPN
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Technical Specifications
Onsemi BC546BRL1G technical specifications.
General
Package/Case
TO-92-3
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
65V
Collector Emitter Saturation Voltage
300mV
Collector Emitter Voltage (VCEO)
65V
Collector-emitter Voltage-Max
600mV
Contact Plating
Copper, Tin, Silver
Current Rating
100mA
Emitter Base Voltage (VEBO)
6V
Frequency
300MHz
Gain Bandwidth Product
300MHz
Height
5.33mm
hFE Min
200
Lead Free
Lead Free
Length
5.2mm
Max Breakdown Voltage
45V
Max Collector Current
100mA
Max Frequency
300MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
625mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
300MHz
DC Rated Voltage
65V
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BC546BRL1G Datasheet
Download the complete datasheet for Onsemi BC546BRL1G to view detailed technical specifications.
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