NPN silicon bipolar junction transistor in TO-92 package. Features a 45V collector-emitter breakdown voltage and 100mA continuous collector current. Offers a maximum power dissipation of 500mW and a transition frequency of 300MHz. Operates across a wide temperature range from -65°C to 150°C. Through-hole mounting with RoHS compliance.
Frequency300MHz
PackageTO-92-3
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi BC547ATAR technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 200mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 600mV |
| Continuous Collector Current | 100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 110 |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BC547ATAR Datasheet
Download the complete datasheet for Onsemi BC547ATAR to view detailed technical specifications.
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