NPN silicon bipolar junction transistor (BJT) in a TO-92 package, featuring a maximum collector current of 100mA and a collector-emitter voltage (VCEO) of 45V. This through-hole component offers a minimum DC current gain (hFE) of 110 and a transition frequency of 300MHz. Operating across a temperature range of -65°C to 150°C, it has a power dissipation of 500mW and is RoHS compliant.
Frequency300MHz
PackageTO-92
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi BC547BTA technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
250mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
600mV
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
6V
Frequency
300MHz
Gain Bandwidth Product
300MHz
Height
5.33mm
hFE Min
110
Lead Free
Lead Free
Length
5.2mm
Max Breakdown Voltage
40V
Max Collector Current
100mA
Max Frequency
300MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
500mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Ammo Pack
Polarity
NPN
Power Dissipation
500mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
Through Hole
Transition Frequency
300MHz
Weight
0.24g
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BC547BTA Datasheet
Download the complete datasheet for Onsemi BC547BTA to view detailed technical specifications.
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