NPN Bipolar Junction Transistor (BJT) for through-hole mounting. Features a 45V collector-emitter breakdown voltage and 45V collector-emitter voltage (VCEO). Offers a 300MHz gain bandwidth product and transition frequency, with a maximum collector current of 100mA. Maximum power dissipation is 625mW, and it operates within a temperature range of -65°C to 150°C. This RoHS compliant component is packaged in bulk.
PackageTO-92-3
Voltage45V
Current Rating100mA
MountingThrough Hole
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Technical Specifications
Onsemi BC547C technical specifications.
General
Package/Case
TO-92-3
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
300mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
250mV
Current Rating
100mA
Emitter Base Voltage (VEBO)
6V
Gain Bandwidth Product
300MHz
hFE Min
420
Lead Free
Lead Free
Max Breakdown Voltage
45V
Max Collector Current
15nA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
625mW
Mount
Through Hole
Package Quantity
2000
Packaging
Bulk
Polarity
NPN
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
Through Hole
Transition Frequency
300MHz
Voltage
45V
DC Rated Voltage
45V
Weight
0.007055oz
Compliance
RoHS
Not Compliant
Datasheet
Onsemi BC547C Datasheet
Download the complete datasheet for Onsemi BC547C to view detailed technical specifications.
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