NPN Bipolar Junction Transistor (BJT) in a TO-92 package, featuring a 30V collector-emitter voltage (VCEO) and a maximum collector current of 100mA. This silicon transistor offers a transition frequency of 300MHz and a minimum DC current gain (hFE) of 110. Designed for through-hole mounting, it operates within a temperature range of -65°C to 150°C and has a power dissipation of 500mW. The component is RoHS compliant and lead-free.
Frequency300MHz
PackageTO-92
Current Rating100mA
MountingThrough Hole
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Technical Specifications
Onsemi BC548CTA technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 600mV |
| Contact Plating | Tin, Matte |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| Height | 4.58mm |
| hFE Min | 110 |
| Lead Free | Lead Free |
| Length | 4.58mm |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 100mA |
| Max Frequency | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 30V |
| Weight | 0.24g |
| Width | 3.86mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BC548CTA Datasheet
Download the complete datasheet for Onsemi BC548CTA to view detailed technical specifications.
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