NPN Bipolar Junction Transistor (BJT) in a TO-92 package, featuring a 30V collector-emitter voltage (VCEO) and a maximum collector current of 100mA. This silicon transistor offers a transition frequency of 300MHz and a minimum DC current gain (hFE) of 110. Designed for through-hole mounting, it operates within a temperature range of -65°C to 150°C and has a power dissipation of 500mW. The component is RoHS compliant and lead-free.
Frequency300MHz
PackageTO-92
Current Rating100mA
MountingThrough Hole
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Technical Specifications
Onsemi BC548CTA technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
30V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
250mV
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
600mV
Contact Plating
Tin, Matte
Current Rating
100mA
Emitter Base Voltage (VEBO)
5V
Frequency
300MHz
Gain Bandwidth Product
300MHz
Height
4.58mm
hFE Min
110
Lead Free
Lead Free
Length
4.58mm
Max Breakdown Voltage
30V
Max Collector Current
100mA
Max Frequency
300MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
500mW
Mount
Through Hole
Number of Elements
1
Package Quantity
1
Packaging
Ammo Pack
Polarity
NPN
Power Dissipation
500mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
300MHz
DC Rated Voltage
30V
Weight
0.24g
Width
3.86mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BC548CTA Datasheet
Download the complete datasheet for Onsemi BC548CTA to view detailed technical specifications.
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