NPN Epitaxial Silicon Transistor, TO-92 package, featuring a 30V Collector-Emitter Voltage (VCEO) and 100mA maximum collector current. This bipolar junction transistor offers a minimum DC current gain (hFE) of 110 and a transition frequency of 300MHz. With a maximum power dissipation of 500mW and a wide operating temperature range from -65°C to 150°C, it is suitable for through-hole mounting. RoHS compliant and lead-free.
Frequency300MHz
PackageTO-92
Current Rating100mA
MountingThrough Hole
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Technical Specifications
Onsemi BC549BTA technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
30V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
250mV
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
600mV
Contact Plating
Tin, Matte
Current Rating
100mA
Emitter Base Voltage (VEBO)
5V
Frequency
300MHz
Gain Bandwidth Product
300MHz
Height
4.58mm
hFE Min
110
Lead Free
Lead Free
Length
4.58mm
Max Breakdown Voltage
30V
Max Collector Current
100mA
Max Frequency
1MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
500mW
Mount
Through Hole
Number of Elements
1
Package Quantity
1
Packaging
Ammo Pack
Polarity
NPN
Power Dissipation
500mW
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
300MHz
DC Rated Voltage
30V
Weight
0.24g
Width
3.86mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BC549BTA Datasheet
Download the complete datasheet for Onsemi BC549BTA to view detailed technical specifications.
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