NPN bipolar junction transistor (BJT) in a TO-92 package, designed for through-hole mounting. Features a maximum collector-emitter voltage (VCEO) of 45V and a continuous collector current rating of 100mA. Offers a minimum DC current gain (hFE) of 110 and a transition frequency of 300MHz. Operates across a wide temperature range from -65°C to 150°C with a maximum power dissipation of 500mW. This RoHS compliant component is supplied in bulk packaging.
Frequency300MHz
PackageTO-92-3
Current Rating100mA
MountingThrough Hole
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Technical Specifications
Onsemi BC550 technical specifications.
General
Package/Case
TO-92-3
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
250mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
600mV
Current Rating
100mA
Emitter Base Voltage (VEBO)
5V
Frequency
300MHz
Gain Bandwidth Product
300MHz
hFE Min
110
Lead Free
Lead Free
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
500mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Bulk
Polarity
NPN
Power Dissipation
500mW
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
Through Hole
Transition Frequency
300MHz
DC Rated Voltage
45V
Weight
0.201g
Compliance
RoHS
Compliant
Datasheet
Onsemi BC550 Datasheet
Download the complete datasheet for Onsemi BC550 to view detailed technical specifications.
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