The BC556_J35Z is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 65V and a maximum collector current of 100mA. It has a maximum power dissipation of 500mW and operates over a temperature range of -65°C to 150°C. The transistor is packaged in a TO-226-3 case and is available in bulk quantities. It is not radiation hardened.
PackageTO-226-3
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi BC556_J35Z technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 65V |
| Collector-emitter Voltage-Max | 650mV |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 150MHz |
| hFE Min | 110 |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | PNP |
| Radiation Hardening | No |
| Transition Frequency | 150MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BC556_J35Z Datasheet
Download the complete datasheet for Onsemi BC556_J35Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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