PNP Bipolar Junction Transistor (BJT) in TO-92 package. Features a 45V collector-emitter voltage (VCEO) and a maximum collector current of 100mA. Offers a minimum DC current gain (hFE) of 110 and a transition frequency of 150MHz. Operates across a wide temperature range from -65°C to 150°C with a power dissipation of 500mW. Through-hole mounting and bulk packaging.
Frequency150MHz
PackageTO-92-3
Current Rating-100mA
MountingThrough Hole
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Technical Specifications
Onsemi BC557BBU technical specifications.
General
Package/Case
TO-92-3
Collector Base Voltage (VCBO)
-50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
-250mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
650mV
Current Rating
-100mA
Emitter Base Voltage (VEBO)
-5V
Frequency
150MHz
Gain Bandwidth Product
150MHz
hFE Min
110
Lead Free
Lead Free
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
500mW
Mount
Through Hole
Number of Elements
1
Package Quantity
1000
Packaging
Bulk
Polarity
PNP
Power Dissipation
500mW
RoHS Compliant
Yes
Series
BC557
Transition Frequency
150MHz
DC Rated Voltage
-45V
Weight
0.1782g
Compliance
RoHS
Compliant
Datasheet
Onsemi BC557BBU Datasheet
Download the complete datasheet for Onsemi BC557BBU to view detailed technical specifications.
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