PNP Bipolar Junction Transistor (BJT) for amplification applications. Features a 30V Collector Emitter Voltage (VCEO) and a 30V Collector Base Voltage (VCBO). Offers a minimum DC current gain (hFE) of 110 and a transition frequency of 150MHz. Packaged in a TO-92 through-hole mount with tin, matte contact plating. Rated for a maximum collector current of 100mA and a power dissipation of 500mW, operating from -65°C to 150°C.
Frequency150MHz
PackageTO-92
Current Rating-100mA
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi BC558BTA technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | -30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 650mV |
| Contact Plating | Tin, Matte |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| Height | 5.33mm |
| hFE Min | 110 |
| Lead Free | Lead Free |
| Length | 5.2mm |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 100mA |
| Max Frequency | 10MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Power Dissipation | 500mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| DC Rated Voltage | -30V |
| Weight | 0.24g |
| Width | 4.19mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BC558BTA Datasheet
Download the complete datasheet for Onsemi BC558BTA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
