PNP Bipolar Junction Transistor (BJT) for general-purpose applications. Features a maximum collector-emitter voltage of 30V and a maximum DC collector current of 0.1A. Offers a maximum power dissipation of 625mW and a minimum DC current gain of 180 at 2mA/5V. This single-element transistor is housed in a 3-pin TO-92 plastic package with formed leads, suitable for through-hole mounting. Operates across a temperature range of -55°C to 150°C.
PackageTO-92
MountingThrough Hole
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Technical Specifications
Onsemi BC558BZL1 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-92 |
| Package/Case | TO-92 |
| Package Description | Plastic Header Style Package |
| Lead Shape | Formed |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 5.2(Max) |
| Package Width (mm) | 4.19(Max) |
| Package Height (mm) | 5.33(Max) |
| Seated Plane Height (mm) | 5.33(Max) |
| Pin Pitch (mm) | 2.8(Max) |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-226-AA |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 30V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 30V |
| Maximum DC Collector Current | 0.1A |
| Maximum Power Dissipation | 625mW |
| Material | Si |
| Minimum DC Current Gain | 180@2mA@5V |
| Maximum Transition Frequency | 360(Typ)MHz |
| Category | Bipolar Small Signal |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 5V1P1 |
| EU RoHS | No |
| HTS Code | 8541210075 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Onsemi BC558BZL1 Datasheet
Download the complete datasheet for Onsemi BC558BZL1 to view detailed technical specifications.
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