NPN Bipolar Junction Transistor (BJT) in a TO-92 package. Features a maximum collector current of 1A and a collector-emitter breakdown voltage of 45V. Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 100MHz. This through-hole mounted component has a maximum power dissipation of 1W and operates within a temperature range of -65°C to 150°C.
Frequency100MHz
PackageTO-92
Current Rating1A
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi BC635 technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
45V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
500mV
Current Rating
1A
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
5.33mm
hFE Min
40
Lead Free
Lead Free
Length
5.2mm
Max Collector Current
1A
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Bulk
Polarity
NPN
Power Dissipation
1W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
Through Hole
Transition Frequency
100MHz
DC Rated Voltage
45V
Weight
0.201g
Width
4.19mm
Compliance
RoHS
Not Compliant
Datasheet
Onsemi BC635 Datasheet
Download the complete datasheet for Onsemi BC635 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
