NPN bipolar junction transistor (BJT) in a TO-92-3 package for through-hole mounting. Features a collector-emitter breakdown voltage of 45V, a maximum collector current of 1A, and a transition frequency of 100MHz. Offers a minimum DC current gain (hFE) of 40 and a collector-emitter saturation voltage of 500mV. Operates across a temperature range of -65°C to 150°C with a power dissipation of 1W. This RoHS compliant component is supplied in an ammo pack.
Frequency100MHz
PackageTO-92-3
Current Rating1A
MountingThrough Hole
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Technical Specifications
Onsemi BC635_D75Z technical specifications.
General
Package/Case
TO-92-3
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
500mV
Current Rating
1A
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
hFE Min
40
Lead Free
Lead Free
Max Collector Current
1A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Ammo Pack
Polarity
NPN
Power Dissipation
1W
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
45V
Compliance
RoHS
Compliant
Datasheet
Onsemi BC635_D75Z Datasheet
Download the complete datasheet for Onsemi BC635_D75Z to view detailed technical specifications.
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