ONSEMI

BC635_D75Z

Datasheet

Onsemi

BC635_D75Z

Name: BC635_D75Z Onsemi
Brand: Onsemi
SKU: BC635_D75Z

NPN BJT Transistor 45V 1A 100MHz TO-92

NPN bipolar junction transistor (BJT) in a TO-92-3 package for through-hole mounting. Features a collector-emitter breakdown voltage of 45V, a maximum collector current of 1A, and a transition frequency of 100MHz. Offers a minimum DC current gain (hFE) of 40 and a collector-emitter saturation voltage of 500mV. Operates across a temperature range of -65°C to 150°C with a power dissipation of 1W. This RoHS compliant component is supplied in an ammo pack.

Frequency100MHz

PackageTO-92-3

Current Rating1A

MountingThrough Hole

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Technical Specifications

Onsemi BC635_D75Z technical specifications.

General

Package/Case	TO-92-3
Collector Emitter Breakdown Voltage	45V
Collector Emitter Saturation Voltage	500mV
Collector Emitter Voltage (VCEO)	45V
Collector-emitter Voltage-Max	500mV
Current Rating	1A
Emitter Base Voltage (VEBO)	5V
Frequency	100MHz
Gain Bandwidth Product	100MHz
hFE Min	40
Lead Free	Lead Free
Max Collector Current	1A
Max Operating Temperature	150°C
Min Operating Temperature	-65°C
Max Power Dissipation	1W
Mount	Through Hole
Number of Elements	1
Package Quantity	2000
Packaging	Ammo Pack
Polarity	NPN
Power Dissipation	1W
RoHS Compliant	Yes
Transition Frequency	100MHz
DC Rated Voltage	45V