PNP Bipolar Junction Transistor (BJT) in a TO-92 package, designed for through-hole mounting. Features a maximum collector current of 1A and a collector-emitter voltage (VCEO) of 45V. Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 100MHz. Operates within a temperature range of -65°C to 150°C with a power dissipation of 1W. This RoHS compliant component is supplied in bulk packaging.
Frequency100MHz
PackageTO-92
Current Rating-1A
MountingThrough Hole
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Technical Specifications
Onsemi BC636 technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | -45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 1W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | BC636 |
| Termination | Through Hole |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -45V |
| Weight | 0.201g |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi BC636 Datasheet
Download the complete datasheet for Onsemi BC636 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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