PNP Bipolar Junction Transistor (BJT) in a TO-92-3 package. Features a maximum collector current of 1A and a collector-emitter voltage of 45V. Offers a transition frequency of 100MHz and a minimum hFE of 40. This RoHS compliant component supports through-hole mounting and operates within a temperature range of -65°C to 150°C.
Frequency100MHz
PackageTO-92-3
Current Rating-1A
MountingThrough Hole
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Technical Specifications
Onsemi BC636TA technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 500mV |
| Contact Plating | Tin, Matte |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 4.58mm |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Length | 4.58mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 1A |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Power Dissipation | 1W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -45V |
| Weight | 0.24g |
| Width | 3.86mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BC636TA Datasheet
Download the complete datasheet for Onsemi BC636TA to view detailed technical specifications.
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