PNP Bipolar Junction Transistor (BJT) in a TO-92-3 package. Features a maximum collector current of 1A and a collector-emitter voltage of 45V. Offers a transition frequency of 100MHz and a minimum hFE of 40. This RoHS compliant component supports through-hole mounting and operates within a temperature range of -65°C to 150°C.
Frequency100MHz
PackageTO-92-3
Current Rating-1A
MountingThrough Hole
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Technical Specifications
Onsemi BC636TA technical specifications.
General
Package/Case
TO-92-3
Collector Base Voltage (VCBO)
-45V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
-500mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
500mV
Contact Plating
Tin, Matte
Current Rating
-1A
Emitter Base Voltage (VEBO)
-5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
4.58mm
hFE Min
40
Lead Free
Lead Free
Length
4.58mm
Max Breakdown Voltage
45V
Max Collector Current
1A
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Ammo Pack
Polarity
PNP
Power Dissipation
1W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
-45V
Weight
0.24g
Width
3.86mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BC636TA Datasheet
Download the complete datasheet for Onsemi BC636TA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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