PNP Bipolar Junction Transistor (BJT) in a TO-92 package. Features a collector-emitter breakdown voltage of 45V and a continuous collector current of -1A. Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 100MHz. Operates within a temperature range of -65°C to 150°C with a maximum power dissipation of 1W. Through-hole mounting, lead-free, and RoHS compliant.
PackageTO-92-3
Current Rating-1A
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi BC636TFR technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector-emitter Voltage-Max | 500mV |
| Continuous Collector Current | -1A |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Series | BC636 |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -45V |
| Weight | 0.24g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BC636TFR Datasheet
Download the complete datasheet for Onsemi BC636TFR to view detailed technical specifications.
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