NPN Bipolar Junction Transistor (BJT) in a TO-92 package. Features a 60V Collector-Emitter Voltage (VCEO) and a 1A Max Collector Current. Offers a minimum DC current gain (hFE) of 25 and a transition frequency of 200MHz. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. Lead-free and RoHS compliant with copper, tin, and silver contact plating.
Frequency200MHz
PackageTO-92-3
Current Rating1A
PolarityNPN
Quick Jump:
Technical Specifications
Onsemi BC637G technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 500mV |
| Contact Plating | Copper, Tin, Silver |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | 60V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BC637G Datasheet
Download the complete datasheet for Onsemi BC637G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
