PNP Bipolar Junction Transistor (BJT) in a TO-92 package, featuring a 60V Collector-Emitter Voltage (VCEO) and a 1A continuous collector current rating. This through-hole component offers a minimum DC current gain (hFE) of 40 and a transition frequency of 150MHz. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1W.
Frequency100MHz
PackageTO-92-3
Current Rating-1A
MountingThrough Hole
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Technical Specifications
Onsemi BC638 technical specifications.
General
Package/Case
TO-92-3
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
-500mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
500mV
Current Rating
-1A
Emitter Base Voltage (VEBO)
-5V
Frequency
100MHz
Gain Bandwidth Product
150MHz
hFE Min
40
Lead Free
Lead Free
Max Breakdown Voltage
60V
Max Collector Current
500mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Through Hole
Number of Elements
1
Package Quantity
5000
Packaging
Bulk
Polarity
PNP
Power Dissipation
1W
RoHS Compliant
No
Transition Frequency
150MHz
DC Rated Voltage
-60V
Weight
0.201g
Compliance
RoHS
Not Compliant
Datasheet
Onsemi BC638 Datasheet
Download the complete datasheet for Onsemi BC638 to view detailed technical specifications.
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