PNP Bipolar Junction Transistor (BJT) in TO-92 package. Features a 60V collector-emitter voltage (VCEO) and a maximum collector current of 1A. Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 100MHz. Rated for 1W power dissipation, operates from -65°C to 150°C, and is RoHS compliant and lead-free.
Frequency100MHz
PackageTO-92-3
Current Rating-1A
MountingThrough Hole
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Technical Specifications
Onsemi BC638TF technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1W |
| RoHS Compliant | Yes |
| Series | BC638 |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -60V |
| Weight | 0.24g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BC638TF Datasheet
Download the complete datasheet for Onsemi BC638TF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.