
NPN Bipolar Junction Transistor (BJT) with a maximum collector current of 1A and a collector-emitter breakdown voltage of 80V. Features a DC rated voltage of 80V, collector-emitter saturation voltage of 500mV, and emitter-base voltage of 5V. Offers a transition frequency of 200MHz and a minimum hFE of 25, with a typical range of 100 to 250. Packaged in a TO-92-3 (TO-226) case with a maximum power dissipation of 625mW, operating from -55°C to 150°C. RoHS compliant and lead-free.
Onsemi BC639-16ZL1G technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Contact Plating | Copper, Tin, Silver |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Box |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | 80V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BC639-16ZL1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
