NPN bipolar junction transistor (BJT) in a TO-92 package, featuring a maximum collector current of 1A and a collector-emitter breakdown voltage of 80V. This component offers a DC current gain (hFE) ranging from 40 to 160 and a transition frequency of 200MHz. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 625mW. The transistor is lead-free and RoHS compliant.
Frequency200MHz
PackageTO-92-3
Current Rating1A
PolarityNPN
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Technical Specifications
Onsemi BC639ZL1G technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Box |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | 80V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BC639ZL1G Datasheet
Download the complete datasheet for Onsemi BC639ZL1G to view detailed technical specifications.
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