
PNP Bipolar Junction Transistor (BJT) in a TO-92 package. Features a 80V collector-emitter voltage (VCEO) and a maximum collector current of 1A. Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 100MHz. Designed for through-hole mounting, this lead-free and RoHS-compliant component operates within a temperature range of -65°C to 150°C, with a maximum power dissipation of 1W.
Onsemi BC640TF technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -100V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Current | 1A |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1W |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Voltage | 80V |
| DC Rated Voltage | -80V |
| Weight | 0.008466oz |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BC640TF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
