PNP Bipolar Junction Transistor in a SOT-23-3 package. Features a collector-emitter voltage of 45V, maximum collector current of 500mA, and a transition frequency of 100MHz. Offers a minimum hFE of 100 and a maximum power dissipation of 300mW. Operates across a temperature range of -55°C to 150°C. This component is RoHS compliant and Halogen Free, supplied in a 10000-piece tape and reel.
Frequency100MHz
PackageSOT-23-3
PolarityPNP
Power300mW
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Technical Specifications
Onsemi BC807-16LT3G technical specifications.
General
Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
-50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
-700mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
700mV
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Halogen Free
Halogen Free
Height
1.01mm
hFE Min
100
Lead Free
Lead Free
Length
3.04mm
Max Breakdown Voltage
45V
Max Collector Current
500mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
225mW
Number of Elements
1
Package Quantity
10000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
300mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
100MHz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BC807-16LT3G Datasheet
Download the complete datasheet for Onsemi BC807-16LT3G to view detailed technical specifications.
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