PNP Bipolar Junction Transistor (BJT) for general-purpose applications. Features a 45V collector-emitter breakdown voltage and a maximum collector current of 500mA. Offers a minimum DC current gain (hFE) of 160 and a transition frequency of 100MHz. Packaged in a 3-pin SOT-23 surface-mount case, this component operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 300mW. It is RoHS compliant and supplied on tape and reel.
Frequency100MHz
PackageSOT-23-3
PolarityPNP
Power300mW
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Technical Specifications
Onsemi BC807-25LT1G technical specifications.
General
Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
-700mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
700mV
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Halogen Free
Halogen Free
Height
0.94mm
hFE Min
160
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
45V
Max Collector Current
500mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Moisture Sensitivity Level
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
300mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
Type
General Purpose
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BC807-25LT1G Datasheet
Download the complete datasheet for Onsemi BC807-25LT1G to view detailed technical specifications.
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