
PNP bipolar junction transistor in SOT-23 package, featuring a 25V collector-emitter breakdown voltage and 800mA maximum collector current. Offers a typical hFE of 100 and a transition frequency of 100MHz. Designed for surface mount applications with a maximum power dissipation of 310mW. Operates across a wide temperature range from -65°C to 150°C. Lead-free and RoHS compliant.
Onsemi BC80816MTF technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | -30V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | -700mV |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 700mV |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 800mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 310mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 310mW |
| RoHS Compliant | Yes |
| Series | BC808 |
| Transition Frequency | 100MHz |
| Weight | 0.03g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BC80816MTF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
