PNP bipolar junction transistor in SOT-23 package, featuring a 25V collector-emitter breakdown voltage and 800mA maximum collector current. Offers a typical hFE of 100 and a transition frequency of 100MHz. Designed for surface mount applications with a maximum power dissipation of 310mW. Operates across a wide temperature range from -65°C to 150°C. Lead-free and RoHS compliant.
Frequency100MHz
PackageSOT-23
MountingSurface Mount
PolarityPNP
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Technical Specifications
Onsemi BC80816MTF technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
-30V
Collector Emitter Breakdown Voltage
25V
Collector Emitter Saturation Voltage
-700mV
Collector Emitter Voltage (VCEO)
25V
Collector-emitter Voltage-Max
700mV
Emitter Base Voltage (VEBO)
-5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
hFE Min
100
Lead Free
Lead Free
Max Collector Current
800mA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
310mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
310mW
RoHS Compliant
Yes
Series
BC808
Transition Frequency
100MHz
Weight
0.03g
Compliance
RoHS
Compliant
Datasheet
Onsemi BC80816MTF Datasheet
Download the complete datasheet for Onsemi BC80816MTF to view detailed technical specifications.
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