
Dual NPN Bipolar Transistor in a SOT-363-6 package, offering 65V collector-emitter breakdown voltage and 100mA continuous collector current. Features a 100MHz transition frequency and a minimum hFE of 200. Operates across a temperature range of -55°C to 150°C with 380mW maximum power dissipation. Packaged in a 3000-piece tape and reel, this component is RoHS compliant and halogen-free.
Onsemi BC846BDW1T1G technical specifications.
| Package/Case | SOT-363-6 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 65V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 65V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Halogen Free | Halogen Free |
| Height | 0.9mm |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Breakdown Voltage | 65V |
| Max Collector Current | 100mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 380mW |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 380mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 65V |
| Width | 1.25mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BC846BDW1T1G to view detailed technical specifications.
No datasheet is available for this part.
