NPN Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a 65V collector-emitter breakdown voltage and a 100mA maximum collector current. Offers a minimum hFE of 200 and a transition frequency of 100MHz. Operates within a temperature range of -55°C to 150°C with a 300mW power dissipation. RoHS and Halogen Free compliant.
Frequency100MHz
PackageSOT-23-3
Current Rating100mA
PolarityNPN
Quick Jump:
Technical Specifications
Onsemi BC846BLT1G technical specifications.
General
Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
65V
Collector Emitter Saturation Voltage
600mV
Collector Emitter Voltage (VCEO)
65V
Collector-emitter Voltage-Max
600mV
Contact Plating
Tin, Matte
Current Rating
100mA
Emitter Base Voltage (VEBO)
6V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Halogen Free
Halogen Free
Height
0.94mm
hFE Min
200
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
65V
Max Collector Current
100mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
300mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
Type
General Purpose
DC Rated Voltage
65V
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BC846BLT1G Datasheet
Download the complete datasheet for Onsemi BC846BLT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
