NPN Bipolar Junction Transistor in a compact SOT-723-3 package. Features a 65V collector-emitter breakdown voltage and a 100mA maximum collector current. Offers a minimum DC current gain (hFE) of 150 and a transition frequency of 100MHz. Operates across a wide temperature range from -55°C to 150°C. This RoHS compliant component is supplied on an 8000-piece tape and reel.
Frequency100MHz
PackageSOT-723-3
Current Rating100mA
PolarityNPN
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Technical Specifications
Onsemi BC846BM3T5G technical specifications.
General
Package/Case
SOT-723-3
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
65V
Collector Emitter Saturation Voltage
600mV
Collector Emitter Voltage (VCEO)
65V
Collector-emitter Voltage-Max
600mV
Contact Plating
Tin, Matte
Current Rating
100mA
Emitter Base Voltage (VEBO)
6V
Gain Bandwidth Product
100MHz
Halogen Free
Halogen Free
Height
0.55mm
hFE Min
150
Lead Free
Lead Free
Length
1.25mm
Max Breakdown Voltage
65V
Max Collector Current
100mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
265mW
Package Quantity
8000
Packaging
Tape and Reel
Polarity
NPN
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
65V
Width
0.85mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BC846BM3T5G Datasheet
Download the complete datasheet for Onsemi BC846BM3T5G to view detailed technical specifications.
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