NPN bipolar junction transistor in an SC-70 (SOT-323) 3-lead package. Features a collector-emitter voltage (VCEO) of 65V, maximum collector current of 100mA, and a DC rated voltage of 65V. Offers a minimum hFE of 200 and a gain bandwidth product of 100MHz. Operates across a temperature range of -55°C to 150°C with a power dissipation of 150mW. Supplied on a 3000-piece tape and reel.
Frequency100MHz
PackageSC
Current Rating100mA
PolarityNPN
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Technical Specifications
Onsemi BC846BWT1 technical specifications.
General
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 65V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 65V |
| Collector-emitter Voltage-Max | 65V |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 200 |
| Lead Free | Contains Lead |
| Max Collector Current | 100mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| RoHS Compliant | No |
| DC Rated Voltage | 65V |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Onsemi BC846BWT1 Datasheet
Download the complete datasheet for Onsemi BC846BWT1 to view detailed technical specifications.
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