NPN bipolar junction transistor in an SC-70 (SOT-323) 3-lead package. Features a collector-emitter voltage (VCEO) of 65V, maximum collector current of 100mA, and a DC rated voltage of 65V. Offers a minimum hFE of 200 and a gain bandwidth product of 100MHz. Operates across a temperature range of -55°C to 150°C with a power dissipation of 150mW. Supplied on a 3000-piece tape and reel.
Frequency100MHz
PackageSC
Current Rating100mA
PolarityNPN
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Technical Specifications
Onsemi BC846BWT1 technical specifications.
General
Package/Case
SC
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
65V
Collector Emitter Saturation Voltage
600mV
Collector Emitter Voltage (VCEO)
65V
Collector-emitter Voltage-Max
65V
Current Rating
100mA
Emitter Base Voltage (VEBO)
6V
Frequency
100MHz
Gain Bandwidth Product
100MHz
hFE Min
200
Lead Free
Contains Lead
Max Collector Current
100mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150mW
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
150mW
Radiation Hardening
No
RoHS Compliant
No
DC Rated Voltage
65V
Compliance
RoHS
Not CompliantNo
Datasheet
Onsemi BC846BWT1 Datasheet
Download the complete datasheet for Onsemi BC846BWT1 to view detailed technical specifications.
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