NPN Epitaxial Silicon Transistor, 3000-REEL. Features 65V Collector-Emitter Voltage (VCEO) and 100mA Max Collector Current. Offers a 300MHz Gain Bandwidth Product and 200mV Collector Emitter Saturation Voltage. Packaged in a SOT-23 surface mount case with tin, matte plating. Operates from -65°C to 150°C with 310mW Max Power Dissipation.
Frequency300MHz
PackageSOT-23
Current Rating100mA
MountingSurface Mount
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Technical Specifications
Onsemi BC846CMTF technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
65V
Collector Emitter Saturation Voltage
200mV
Collector Emitter Voltage (VCEO)
65V
Collector-emitter Voltage-Max
600mV
Contact Plating
Tin, Matte
Current Rating
100mA
Emitter Base Voltage (VEBO)
6V
Frequency
300MHz
Gain Bandwidth Product
300MHz
Height
0.93mm
hFE Min
110
Lead Free
Lead Free
Length
2.92mm
Max Breakdown Voltage
65V
Max Collector Current
100mA
Max Frequency
300MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
310mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
310mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
300MHz
DC Rated Voltage
65V
Weight
0.03g
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BC846CMTF Datasheet
Download the complete datasheet for Onsemi BC846CMTF to view detailed technical specifications.
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