General Purpose NPN Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a 45V Collector-Emitter Voltage (VCEO) and a 100mA maximum collector current. Offers a minimum DC current gain (hFE) of 200 and a transition frequency of 100MHz. Dissipates up to 300mW with an operating temperature range of -55°C to 150°C. RoHS and Lead-Free compliant.
Frequency100MHz
PackageSOT-23-3
Current Rating100mA
PolarityNPN
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Technical Specifications
Onsemi BC847BLT1G technical specifications.
General
Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
600mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
600mV
Contact Plating
Tin, Matte
Current Rating
100mA
Emitter Base Voltage (VEBO)
6V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Halogen Free
Halogen Free
Height
0.94mm
hFE Min
200
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
45V
Max Collector Current
100mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
300mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
Type
General Purpose
DC Rated Voltage
45V
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BC847BLT1G Datasheet
Download the complete datasheet for Onsemi BC847BLT1G to view detailed technical specifications.
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