NPN Bipolar Junction Transistor (BJT) in a SOT-723-3 package. Features a collector-emitter voltage (VCEO) of 45V, maximum collector current of 100mA, and a transition frequency of 100MHz. Offers a maximum power dissipation of 260mW and operates within a temperature range of -55°C to 150°C. Supplied on an 8000-piece tape and reel.
Frequency100MHz
PackageSOT-723-3
PolarityNPN
Power600mW
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Technical Specifications
Onsemi BC847BM3T5G technical specifications.
General
| Package/Case | SOT-723-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 600mV |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 0.55mm |
| Lead Free | Lead Free |
| Length | 1.25mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 260mW |
| Number of Elements | 1 |
| Package Quantity | 8000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 600mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Width | 0.85mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BC847BM3T5G Datasheet
Download the complete datasheet for Onsemi BC847BM3T5G to view detailed technical specifications.
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