Co-packaged NPN and PNP bipolar junction transistor (BJT) featuring a 45V collector-emitter breakdown voltage and 100mA maximum collector current. This device offers a 100MHz transition frequency and a minimum hFE of 150. Encased in a compact SOT-363-6 package, it operates within a temperature range of -55°C to 150°C and has a power dissipation of 380mW. The component is RoHS compliant and supplied on a 10000-piece tape and reel.
Frequency100MHz
PackageSOT-363-6
PolarityNPN, PNP
Power380mW
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Technical Specifications
Onsemi BC847BPDW1T3G technical specifications.
General
| Package/Case | SOT-363-6 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 600mV |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Halogen Free | Halogen Free |
| Height | 1mm |
| hFE Min | 150 |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 380mW |
| Number of Elements | 2 |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Power Dissipation | 380mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BC847BPDW1T3G Datasheet
Download the complete datasheet for Onsemi BC847BPDW1T3G to view detailed technical specifications.
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