NPN Bipolar Junction Transistor in a SOT-563-6 package, featuring a 45V Collector Emitter Voltage (VCEO) and a 100mA maximum collector current. This component offers a minimum DC current gain (hFE) of 420 and a transition frequency of 100MHz. It operates within a temperature range of -55°C to 150°C and has a power dissipation of 500mW. The device is supplied on a 4000-piece tape and reel, with tin, matte contact plating, and is RoHS compliant.
Frequency100MHz
PackageSOT-563-6
Current Rating100mA
PolarityNPN
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Technical Specifications
Onsemi BC847CDXV6T1G technical specifications.
General
Package/Case
SOT-563-6
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
600mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
600mV
Contact Plating
Tin, Matte
Current Rating
100mA
Emitter Base Voltage (VEBO)
6V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Halogen Free
Halogen Free
Height
0.024inch
hFE Min
420
Lead Free
Lead Free
Length
0.066inch
Max Breakdown Voltage
45V
Max Collector Current
100mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Number of Elements
2
Package Quantity
4000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
500mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
45V
Width
0.051inch
Compliance
RoHS
Compliant
Datasheet
Onsemi BC847CDXV6T1G Datasheet
Download the complete datasheet for Onsemi BC847CDXV6T1G to view detailed technical specifications.
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