The Onsemi BC847CWT3G is a small outline transistor with a maximum collector current of 100mA and a maximum collector-emitter breakdown voltage of 45V. It operates at frequencies up to 100MHz and has a minimum current gain of 270. The transistor is packaged in a SC package and is lead-free and RoHS compliant. It has a maximum power dissipation of 150mW and can operate over a temperature range of -55°C to 150°C.
Frequency100MHz
PackageSC
PolarityNPN
Power150mW
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Technical Specifications
Onsemi BC847CWT3G technical specifications.
General
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 600mV |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 270 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Number of Elements | 1 |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BC847CWT3G Datasheet
Download the complete datasheet for Onsemi BC847CWT3G to view detailed technical specifications.
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