
NPN Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a 45V Collector-Emitter Voltage (VCEO) and a 200mA maximum collector current. Offers a minimum DC current gain (hFE) of 110 and a transition frequency of 200MHz. Packaged in an SC surface-mount case, this component operates from -55°C to 150°C and is supplied on a 3000-piece tape and reel.
Onsemi BC847S technical specifications.
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 650mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 650mV |
| Contact Plating | Tin, Matte |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 200MHz |
| Height | 1mm |
| hFE Min | 110 |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 200mA |
| Max Frequency | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | 45V |
| Weight | 0.028g |
| Width | 1.25mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BC847S to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
