
Dual NPN Bipolar Transistor in a SOT-363-6 package, offering a 30V collector-emitter voltage (VCEO) and a maximum collector current of 100mA. Features a high DC current gain (hFE) of 420 and a transition frequency of 100MHz. This RoHS compliant component operates within a temperature range of -55°C to 150°C and has a power dissipation of 380mW. Supplied on a 3000-piece tape and reel.
Onsemi BC848CDW1T1G technical specifications.
| Package/Case | SOT-363-6 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 600mV |
| Contact Plating | Tin, Matte |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 1.1mm |
| hFE Min | 420 |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 100mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 380mW |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 380mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 30V |
| Width | 1.35mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BC848CDW1T1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
