NPN/PNP Bipolar Junction Transistor in a compact SOT-363-6 package. Features a maximum collector current of 100mA and a collector-emitter breakdown voltage of 30V. Offers a minimum DC current gain (hFE) of 270 and a transition frequency of 100MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 380mW. Supplied on a 3000-piece tape and reel.
Frequency100MHz
PackageSOT-363-6
Current Rating100mA
PolarityNPN, PNP
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Technical Specifications
Onsemi BC848CPDW1T1G technical specifications.
General
| Package/Case | SOT-363-6 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector-emitter Voltage-Max | 600mV |
| Contact Plating | Tin, Matte |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| Height | 1mm |
| hFE Min | 270 |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 100mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 380mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 30V |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BC848CPDW1T1G Datasheet
Download the complete datasheet for Onsemi BC848CPDW1T1G to view detailed technical specifications.
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