Dual PNP Bipolar Junction Transistor (BJT) in a SOT-363-6 package. Features a 65V Collector-Emitter Voltage (VCEO) and 80V Collector-Base Voltage (VCBO). Offers a maximum collector current of 100mA and a transition frequency of 100MHz. This RoHS compliant component operates from -55°C to 150°C with a power dissipation of 380mW. Supplied on a 3000-piece tape and reel.
Frequency100MHz
PackageSOT-363-6
Current Rating-100mA
PolarityPNP
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Technical Specifications
Onsemi BC856BDW1T1G technical specifications.
General
Package/Case
SOT-363-6
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
65V
Collector Emitter Saturation Voltage
-650mV
Collector Emitter Voltage (VCEO)
65V
Collector-emitter Voltage-Max
650mV
Current Rating
-100mA
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
0.9mm
hFE Min
220
Lead Free
Lead Free
Length
2mm
Max Breakdown Voltage
65V
Max Collector Current
100mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
380mW
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
380mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
-65V
Width
1.25mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BC856BDW1T1G Datasheet
Download the complete datasheet for Onsemi BC856BDW1T1G to view detailed technical specifications.
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